Title :
Electron and Hole Real Space Transfer in InAlAs/InGaAs Heterostructure Device
Author :
Berthold, Gunther ; Mastrapasqua, M. ; Canali, C. ; Manfredi, M. ; Zanoni, E. ; Bahl, S.R. ; del Alamo, J.A.
Author_Institution :
Dipartimento di Elettronica e Informatica, Via Gradenigo 6A, 35131 Padova, Italy
Abstract :
We report a detailed experimental analysis of both electron and hole Real Space Transfer occurring in InAlAs/InGaAs heterostructure devices grown on InP. At high drain-source voltages electrons are heated and holes are created by impact ionization. Both electrons and holes contribute to the gate current whereas the relative size of these contribution depends on the magnitude and polarity of the bias applied to the control and to the drain electrode.
Keywords :
Charge carrier processes; Electrodes; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Size control; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
