DocumentCode :
3573346
Title :
Radiation effects on SOI electrostatic comb drive actuators of MEMS devices
Author :
Lozano, A. ; Palumbo, F. ; Alurralde, F.
Author_Institution :
Centro de Electron. e Inf., Inst. Nac. de Tecnol. Ind. (INTI), Buenos Aires, Argentina
fYear :
2009
Firstpage :
46
Lastpage :
49
Abstract :
Considerable effort has gone into the study of the failure mechanisms and reliability of micro-electro-mechanical-systems (MEMS) to extend its use to critical areas. In this paper the electrostatic comb drive actuator of SOI microrelays prototype is evaluated for space applications. The MEMS devices are subjected to uniform proton beam of 10 MeV, while its response is monitored by electrical characteristics for successive irradiation pulses. Although the system shows a significant increase of positive trapped charge, it has not been found any limitation on the functionality based in the main parameters such as the actuation voltage, the leakage currents, and conduction mechanism of the switch.
Keywords :
electrostatic actuators; leakage currents; radiation effects; silicon-on-insulator; actuation voltage; electrostatic comb drive actuators; leakage currents; micro-electro-mechanical-systems; radiation effects; silicon-on-insulator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro-Nanoelectronics, Technology and Applications, 2009. EAMTA 2009. Argentine School of
Print_ISBN :
978-1-4244-4835-7
Electronic_ISBN :
978-9-8725-1029-9
Type :
conf
Filename :
5288899
Link To Document :
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