• DocumentCode
    3573676
  • Title

    Problems Related to Avalanche and Secondary Breakdown of Silicon p-n Junction

  • Author

    Puritis, T.

  • Author_Institution
    Riga Technical University, 1a Kalku str., Riga, LV-1658, LATVIA
  • fYear
    1995
  • Firstpage
    635
  • Lastpage
    638
  • Abstract
    New aspects of the avalanche and secondary breakdown of silicon p-n junction are given in this paper. It is shown that only those charge carriers can cause impact ionisation which lie in separate ``light´´ charge subbands (spin-orbit-split-off band for holes). The existence of light charge carriers´ flow in ``pre-mesoplasma´´ and mesoplasma at secondary breakdown is shown.
  • Keywords
    Avalanche breakdown; Charge carriers; Clouds; Electric breakdown; Electrons; Impact ionization; P-n junctions; Plasma temperature; Semiconductor devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5436074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3573676