Title :
Problems Related to Avalanche and Secondary Breakdown of Silicon p-n Junction
Author_Institution :
Riga Technical University, 1a Kalku str., Riga, LV-1658, LATVIA
Abstract :
New aspects of the avalanche and secondary breakdown of silicon p-n junction are given in this paper. It is shown that only those charge carriers can cause impact ionisation which lie in separate ``light´´ charge subbands (spin-orbit-split-off band for holes). The existence of light charge carriers´ flow in ``pre-mesoplasma´´ and mesoplasma at secondary breakdown is shown.
Keywords :
Avalanche breakdown; Charge carriers; Clouds; Electric breakdown; Electrons; Impact ionization; P-n junctions; Plasma temperature; Semiconductor devices; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
