• DocumentCode
    3573685
  • Title

    New Method for the Extraction of the Gate Voltage Dependence of the Series Resistance in CMOS Transistors

  • Author

    Brut, H. ; Ghibaudo, G. ; Juge, A.

  • Author_Institution
    SGS-THOMSON Microelectronics BP 16, 38921 Crolles, France; LPCS, ENSERG, BP 257, 38016 Grenoble, France
  • fYear
    1996
  • Firstpage
    675
  • Lastpage
    678
  • Abstract
    The resistance based extraction method for the determination of effective channel length and series resistance behaviour with gate bias is critically analysed. The impossibility of extracting the gate voltage variations of these parameters concurrently is demonstrated. Then both new approach and parameter extraction procedure are given and experimentally applied to several technologies from 1.2¿m down to 0.35¿m technologies.
  • Keywords
    CMOS process; CMOS technology; Circuit synthesis; Design engineering; Linear predictive coding; MOS devices; Microelectronics; Parameter extraction; Semiconductor device modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3573685