DocumentCode
3573689
Title
Low Temperature Characteristics of Gated Lateral PNP Transistors
Author
Deen, MJ ; Yan, Z.X.
Author_Institution
School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
fYear
1995
Firstpage
643
Lastpage
646
Abstract
Low temperature characteristics of gated lateral PNP (LPNP) transistors made from 0.8¿m BiCMOS technology are described. Gate-base shorted or gate-emitter shorted BJT configurations are used for comparison for temperature variation from 297K to 77K. Very high current gain (ßF = ~800) at low current levels (Ic ≪ 1¿A), and remarkable low temperature current gain characteristics (ßF ≫ 5×105 at ~97K) were observed for the gate-base shorted lateral PNP transistors.
Keywords
BiCMOS integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS technology; FETs; MOS devices; Performance gain; Temperature; Testing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Print_ISBN
286332182X
Type
conf
Filename
5436077
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