DocumentCode
3573757
Title
High Quality Polycrystalline Thin Films Transistors Made by Excimer Laser Crystallisation
Author
Legagneux, P. ; Petinot, F. ; Huet, O. ; Plais, F. ; Reita, C. ; Pribat, D. ; Carluccio, R. ; Pecora, A. ; Mariucci, L. ; Fortunato, G.
Author_Institution
Thomson CSF-LCR, Domaine de Corbeville, 91404 Orsay Cedex, France
fYear
1996
Firstpage
1071
Lastpage
1074
Abstract
We have studied excimer laser crystallisation of a-Si films and in particular device performance as a function of the crystalline quality of the polysilicon films. For optimised irradiation conditions, we report mobilities of 350 and 150 cm2/Vs respectively for n and p-type devices and a delay time of 4 ns / stage measured at 10V on 5 ¿m CMOS ring oscillators.
Keywords
Crystalline materials; Crystallization; Etching; Grain size; Laser beams; Optical materials; Optical pulses; Pulsed laser deposition; Scanning electron microscopy; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Print_ISBN
286332196X
Type
conf
Filename
5436085
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