Influence of Mobility Degradation on Distortion Analysis in MOSFETs

Compact MOSFET models in contemporary circuit-simulators fail to accurately describe distortion effects. In the linear region of the MOSFET this failure is mainly due to inaccurate modelling of the mobility degradation effect. In this paper a new model for mobility degradation is introduced which gives a major improvement in distortion analysis in the linear region for both n-type and p-type MOS-transistors. Incorporating a gate voltage dependent series-resistance, this model even gives good results for very short channel length devices.