• DocumentCode
    3573798
  • Title

    Observation of the Electron Reflection from N//N+ Junction in GaAs by Resonant Tunnelling through Pseudo-Quantum Well in Single Barrier Heterostructure

  • Author

    Dubrovskii, Yu.V. ; Andersson, T.G. ; Khanin, Yu.N. ; Larkin, I.A. ; Vdovin, E.E.

  • Author_Institution
    Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow District, 142432 Russia.
  • fYear
    1995
  • Firstpage
    691
  • Lastpage
    694
  • Abstract
    Resonant tunnelling tlhrough virtual states in a wide pseudo-quanttum well is observed at liquid He temperature. This well is formed in the spacer layer region (n--GaAs) of a single barrier heterostructure n+-GaAs/n--GaAs/AIAs/n--GaAs/n+-GaAs due to the electron reflection from the main barrier at one side and from the smooth potential drop through the n-/n+ junction in the GaAs at the other side. The measured electron reflection coefficient from n-/n+ junction is equal to 0.3%-3% in the energy interval relevant in the work.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5436095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3573798