Title :
Diffusion of Beryllium in InGaAs Epitaxial Layers
Author :
Koumetz, S. ; Marcon, J. ; Ketata, K. ; Ketata, M. ; Launay, P. ; Benchimol, J.L.
Author_Institution :
LCIA/INSA de Rouen, BP 08, F76131 Mont Saint Aignan, France, Phone: (33) 35-52-84-08, Fax: (33) 35-52-84-83
Abstract :
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, a General Substitutional-Interstitial model is proposed. A simultaneous diffusion by dissociative and kick-out models is suggested. The concentration dependent diffusivity has also been covered to perforn an improved data fitting of Be diffusion profiles.
Keywords :
Doping; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Materials reliability; Optoelectronic devices; Rapid thermal annealing; Semiconductor process modeling;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
