Title :
Heterojunction FETs on InP for Optoelectronic Applications
Author :
Achouche, M. ; Palla, R. ; Na?¯t-Zerrad, K. ; Post, G. ; Clei, A.
Author_Institution :
France Telecom CNET PAB, Laboratoire de Bagneux, 196, Av. Henri Ravera, BP 107, 92225 BAGNEUX, FRANCE.
Keywords :
Breakdown voltage; Circuits; Dry etching; FETs; HEMTs; Heterojunctions; Indium phosphide; MODFETs; Schottky diodes; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
