DocumentCode

3573814

Title

Heterojunction FETs on InP for Optoelectronic Applications

Author

Achouche, M. ; Palla, R. ; Na?¯t-Zerrad, K. ; Post, G. ; Clei, A.

Author_Institution

France Telecom CNET PAB, Laboratoire de Bagneux, 196, Av. Henri Ravera, BP 107, 92225 BAGNEUX, FRANCE.

fYear

1995

Firstpage

703

Lastpage

706

Keywords

Breakdown voltage; Circuits; Dry etching; FETs; HEMTs; Heterojunctions; Indium phosphide; MODFETs; Schottky diodes; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Print_ISBN

286332182X

Type

conf

Filename

5436099