Analysis of Leakage Currents in Smart Power Devices

The Smart Power Device under consideration is a buried layer device which is widely used in industry. An n-doped epitaxy layer is grown on a highly n-doped buried layer. This layer is placed on the p-substrate. The epitaxy-and buried layers are surrounded by a double diffused p-isolation. The leakage currents between the epitaxy layer and the isolation are simulated and measured in a temperature range from 300 K to 500 K.