Title :
Performance optimization of bulk junctionless FinFETs through work function engineering
Author :
Bharathi, R. ; Durga, G. ; Kumar, N. Vinodh ; Nagarajan, K.K. ; Srinivasan, R.
Author_Institution :
ECE Dept., SSN Coll. of Eng., Chennai, India
Abstract :
In this paper, the characteristics of bulk junctionless FinFET is studied using TCAD simulations and its leakage current is optimized using gate electrode work function engineering, thereby increasing the ION/IOFF ratio. It can be observed that, ION is more sensitive to work function at lower channel doping concentrations and beyond a certain breaking point work function, the increase in work function does not have any effect on IOFF- The ION/IOFF ratio increases till the breaking point work function and then starts decreasing. The highest ION/IOFF ratio observed at the breaking point work function is the optimum ION/IOFF ratio. The subthreshold slope essentially remains constant when the work function is changed.
Keywords :
MOSFET; leakage currents; optimisation; technology CAD (electronics); work function; ION-IOFF ratio; TCAD simulations; breaking point work function; bulk junctionless finfet characteristics; gate electrode work function engineering; leakage current; lower channel doping concentrations; performance optimization; subthreshold slope; Computers; Doping; Electrodes; FinFETs; Leakage currents; Logic gates; Semiconductor process modeling; Bulk Junctionless FinFET; TCAD; Work function engineering;
Conference_Titel :
Circuit, Power and Computing Technologies (ICCPCT), 2014 International Conference on
Print_ISBN :
978-1-4799-2395-3
DOI :
10.1109/ICCPCT.2014.7055030
