Performance optimization of bulk junctionless FinFETs through work function engineering

Author

Bharathi, R. ; Durga, G. ; Kumar, N. Vinodh ; Nagarajan, K.K. ; Srinivasan, R.

Author_Institution

ECE Dept., SSN Coll. of Eng., Chennai, India

fYear

2014

Firstpage

1291

Lastpage

1295

Abstract

In this paper, the characteristics of bulk junctionless FinFET is studied using TCAD simulations and its leakage current is optimized using gate electrode work function engineering, thereby increasing the I_ON/I_OFF ratio. It can be observed that, I_ON is more sensitive to work function at lower channel doping concentrations and beyond a certain breaking point work function, the increase in work function does not have any effect on I_OFF- The I_ON/I_OFF ratio increases till the breaking point work function and then starts decreasing. The highest I_ON/I_OFF ratio observed at the breaking point work function is the optimum I_ON/I_OFF ratio. The subthreshold slope essentially remains constant when the work function is changed.

Keywords

MOSFET; leakage currents; optimisation; technology CAD (electronics); work function; I_ON-I_OFF ratio; TCAD simulations; breaking point work function; bulk junctionless finfet characteristics; gate electrode work function engineering; leakage current; lower channel doping concentrations; performance optimization; subthreshold slope; Computers; Doping; Electrodes; FinFETs; Leakage currents; Logic gates; Semiconductor process modeling; Bulk Junctionless FinFET; TCAD; Work function engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuit, Power and Computing Technologies (ICCPCT), 2014 International Conference on

Print_ISBN

978-1-4799-2395-3

Type

conf

DOI

10.1109/ICCPCT.2014.7055030

Filename

7055030