DocumentCode :
3574672
Title :
Dead time generator for synchronous boost converters with GaN transistors
Author :
Macellari, Michele ; Celani, Fabio ; Schirone, Luigi
Author_Institution :
DIAEE - Dipt. di Ing. Astronautica, Elettr. ed Energetica, Sapienza Univ. di Roma, Rome, Italy
fYear :
2014
Firstpage :
1
Lastpage :
6
Abstract :
An analog dynamic dead time generator for synchronous boost converters based on GaN transistors is presented. A prototype was designed to operate at switching frequencies in the MHz range, with wide variations of the output voltage, and experimentally demonstrated its capability to stabilize the dead time duration to a few nanoseconds, independent of wide variations of the switching times of the transistor in use.
Keywords :
DC-DC power convertors; III-V semiconductors; gallium compounds; power transistors; DC-DC converters; GaN; analog dynamic dead time generator; gallium nitride transistors; synchronous boost converters; Delays; Gallium nitride; Generators; Logic gates; Switches; Switching frequency; Transistors; DC-DC converters; GaN transistors; dead time control; synchronous boost converters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electric Vehicle Conference (IEVC), 2014 IEEE International
Type :
conf
DOI :
10.1109/IEVC.2014.7056113
Filename :
7056113
Link To Document :
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