DocumentCode
3575369
Title
Reduction in the de-magnetization effect in bit patterned media using WO3 nanowires
Author
Gopalakrishnan, C. ; Ganesh, K.R. ; Ramaswamy, S. ; Jegannathan, K.
Author_Institution
Nanotechnol. Res. Center, SRM Univ., Nagar, India
fYear
2010
Firstpage
1
Lastpage
2
Abstract
In a bit patterned media, the nanofabricated islands tends to vary in shape, material properties and size, which leads to the variation in switching fields causing read and write errors. Another contributing factor to this issue is the demagnetizing effects caused by adjacent bits. Even-though such a demagnetization effect in perpendicular storage media is comparatively less than parallel media; it possesses a great challenge when it comes to very high density bit patterning. Several patterning methodologies like varying the size, shape, distance between bits and incorporation of anti ferromagnetic and diamagnetic materials as shields in between bits has been tried out to overcome this issue.
Keywords
demagnetisation; magnetic switching; nanowires; perpendicular magnetic recording; tungsten compounds; WO3; antiferromagnetic materials; bit patterned media; de-magnetization effect; diamagnetic materials; high density bit patterning; nanofabricated islands; nanowires; perpendicular storage media; read error; switching fields; write error; Nanowires;
fLanguage
English
Publisher
ieee
Conference_Titel
APMRC, 2010 Digest
Print_ISBN
978-1-4244-8103-3
Type
conf
Filename
5682222
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