Novel RF circuits using MEMS devices and silicon micromachining

Author

Katehi, L.P.B. ; Rebeiz, G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

3

fYear

2000

fDate

16-21 July 2000

Abstract

Summary form only given. The evolution of on-wafer packaging using Si micromachining is still in its infancy. In addition to the use of on-wafer packaging, the use of MEMS for the development of high-performance, low-cost circuit components that can be integrated in a three dimensional environment has revolutionized circuit architectures. The article presents a summary of the work at the University of Michigan in MEMS switches for microwave and mm-wave applications. An insertion loss of only 0.02 dB at 10-30 GHz is measured, while high isolation (150 dB) has been achieved by use of tuned switch packages for 20-40 GHz applications. The article concludes with the use of MEMS switches in tunable filters.

Keywords

MMIC; elemental semiconductors; integrated circuit packaging; micromachining; micromechanical devices; microwave filters; microwave integrated circuits; microwave switches; millimetre wave integrated circuits; silicon; 0.02 dB; 10 to 30 GHz; 20 to 40 GHz; EHF; MEMS devices; MEMS switches; RF circuits; SHF; Si; University of Michigan; circuit architectures; elemental semiconductor; high-performance circuit components; insertion loss; low-cost circuit components; microwave applications; mm-wave applications; on-wafer packaging; silicon micromachining; tunable filters; tuned switch packages; Circuits; Insertion loss; Microelectromechanical devices; Micromachining; Micromechanical devices; Microswitches; Packaging; Radio frequency; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 2000. IEEE

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-6369-8

Type

conf

DOI

10.1109/APS.2000.874313

Filename

874313