RF modeling of p-n-p-n double-gate tunneling field-effect transistors

This paper presents radio-frequency (RF) modeling of p-n-p-n double-gate tunneling field-effect transistors (TFETs). The p-n-p-n TFETs are evaluated for various RF parameters such as cut-off frequency, maximum oscillation frequency, gate-source capacitance, gate-drain capacitance, channel resistance, and transconductance. Direct comparisons of high-frequency performances and extracted parameters are made with conventional TFETs. A nonquasistatic radio-frequency model has been used, along with SPICE simulations to investigate p-n-p-n TFETs with RF parameters extracted from TCAD simulation Y-parameters. The results show excellent agreements with the TCAD simulation results for the high frequency range up to the cut-off frequency for the millimeter-wave applications.