DocumentCode
3575839
Title
A base excitation device with PZT for MEMS dynamic testing under high temperature environment
Author
Dongsheng She ; Yiliu Yang
Author_Institution
Coll. of Eng., Bohai Univ., Jinzhou, China
fYear
2014
Firstpage
823
Lastpage
826
Abstract
In order to excite silicon microcantilevers under the temperature ranging from room temperature to 500°C, an impact base excitation device was developed. In excitation device, an electric heating plate is used as the heating element to heat the testing microstructure. A separated structure was designed to protect the piezoelectric ceramic apart from the damage due to the high temperature. Using the developed excitation device, silicon microcantilevers were excited under 500°C. The impulse response signals of the silicon microcantilevers were obtained by a Laser Doppler Vibrometer. The dynamic characteristics of the silicon microcantilevers have been studied. The results show that the designed excitation device is effective to excite the silicon cantilevers under the high temperature environment.
Keywords
cantilevers; dynamic testing; elemental semiconductors; lead compounds; micromechanical devices; piezoceramics; silicon; transient response; vibration measurement; MEMS dynamic testing; PZT; Si; base excitation device; electric heating plate; high temperature environment; impulse response signals; laser Doppler vibrometer; piezoelectric ceramic; silicon microcantilevers; temperature 20 degC to 500 degC; Micromechanical devices; Microstructure; Silicon; Temperature; Temperature measurement; Testing; Vibrations; Laser Doppler Vibrometer; base excitation; high temperature environment; piezoelectric ceramic; silicon microcantilever;
fLanguage
English
Publisher
ieee
Conference_Titel
Mechatronics and Control (ICMC), 2014 International Conference on
Print_ISBN
978-1-4799-2537-7
Type
conf
DOI
10.1109/ICMC.2014.7231668
Filename
7231668
Link To Document