Title :
New Simulation Model for Power Density of RF Waves and Its Field Verification
Author :
Thakur, Gautam ; Thakkar, Sanjeev ; Upadhyay, Yash
Author_Institution :
BITS Pilani, Hyderabad, India
Abstract :
Simulation Models for Power Density of Radio Frequency (RF) Waves are used to ascertain compliance to EMF Standards (Electromagnetic Fields). ITU T has specified these under different accessibility criteria which are widely used and have been extended to revised EMF Standards issued in India. Field measurements of power density are carried out in case the models predict values higher than those specified in EMF Standards. The most critical area where compliance needs to be ensured is the near field region of the antenna as beyond which the path loss decay of RF Waves with distance from emitting source is large enough to ensure that Power Density is much below the Standards. Analysis of Field Measurements has been carried out which gives the result that the existing models being used lead to large scale but safe side overestimation of Power Density in this region. It is shown that a new method based on the Free Space Path Loss Model can be effectively used to estimate the Power Density in near field regions for both Macro and Micro Cells.
Keywords :
antennas; electromagnetic fields; femtocellular radio; losses; magnetic field measurement; microcellular radio; near-field communication; EMF standards; ITU T; India; RF waves; accessibility criteria; antenna; critical area; electromagnetic field standards; emitting source; femtocells; field measurements; field verification; free space path loss decay model; macrocells; microcells; near field region; power density overestimation; radio frequency waves; simulation model; Antenna measurements; Antennas; Density measurement; Power measurement; Power system measurements; Radio frequency; Standards; EMF; EMF Standards; ICNIRP; RF Waves; Radiation;
Conference_Titel :
Computational Intelligence, Communication Systems and Networks (CICSyN), 2014 Sixth International Conference on
Print_ISBN :
978-1-4799-5075-1
DOI :
10.1109/CICSyN.2014.24