GaAs and GaN RF chipset solutions for AESA Radar

Author

Viaud, Jean-Pierre ; Serru, Veronique ; Bois, Jean-Rene

Author_Institution

United Monolithic Semicond., Villebon-sur-Yvette, France

fYear

2014

Firstpage

1

Lastpage

3

Abstract

This paper presents the current offer and the on-going development of United Monolithic Semiconductors (UMS) regarding RF chipsets for AESA Radar. UMS has developed a wide range of RF chipset covering AESA Radar applications from L to Q-band. These products have been developed on in-house UMS GaAs PHEMT and HBT technologies offering state of the art electrical performance and high reliability level. Regarding the next steps, UMS is developing a new generation of GaN products including robust LNAs & Switches and high power performance HPAs. These GaN products are developed on UMS in-house technologies

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; radar applications; radiofrequency integrated circuits; wide band gap semiconductors; AESA radar application; GaAs; GaN; HBT technolgy; HPA; L-band; LNA; PHEMT technology; Q-band; RF chipset; UMS; active electronically scanned array; heterojunction bipolar transistor; high-electron-mobility transistor; high-power amplifier; low-noise amplifier; united monolithic semiconductor; Heterojunction bipolar transistors; Noise; PHEMTs; Radar; Radio frequency; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Radar Conference (Radar), 2014 International

Type

conf

DOI

10.1109/RADAR.2014.7060399

Filename

7060399