Grain size monitoring of 3D flash memory channel poly-Si using multiwavelength Raman spectroscopy

Author

Woo Sik Yoo ; Ishigaki, Toshikazu ; Ueda, Takeshi ; Kang, Kitaek ; Noh Yeal Kwak ; Dong Sun Sheen ; Sung Soon Kim ; Min Sung Ko ; Wan Sup Shin ; Byung Seok Lee ; Seung Jin Yeom ; Sung Ki Park

Author_Institution

WaferMasters, Inc., San Jose, CA, USA

fYear

2014

Firstpage

1

Lastpage

4

Abstract

Raman spectroscopy was used for characterizing poly-Si after thermal annealing of chemical vapor deposited (CVD) thin a-Si films in the vertical channel region of 3D V-NAND device wafers using various annealing conditions and techniques. Raman spectra, indicating crystallization of a-Si films and grain growth of poly-Si with respect to annealing conditions and techniques, was measured using a multiwavelength Raman spectroscopy system.

Keywords

NAND circuits; Raman spectra; Raman spectroscopy; annealing; chemical vapour deposition; flash memories; grain size; thin film circuits; three-dimensional integrated circuits; 3D V-NAND device wafers; 3D flash memory channel; CVD; Raman spectra; Si; annealing conditions; annealing techniques; chemical vapor deposited; grain size monitoring; multiwavelength Raman spectroscopy; thermal annealing; thin films; vertical channel region; Annealing; Films; Grain size; Raman scattering; Silicon; Temperature measurement; Three-dimensional displays; 3D V-NAND; Raman spectroscopy; channel poly Si; poly Si grain size monitoring; thermal crystallization annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual

Print_ISBN

978-1-4799-4203-9

Type

conf

DOI

10.1109/NVMTS.2014.7060843

Filename

7060843