The temperature dependence of threshold voltage variations due to oblique single grain boundary in 3D NAND unit cells

Author

Jungsik Kim ; Bo Jin ; Meyyappan, M. ; Hyeongwan Oh ; Junyoung Lee ; Taiuk Rim ; Chang-Ki Baek ; Jeong-Soo Lee

Author_Institution

Div. of IT Convergence Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

fYear

2014

Firstpage

1

Lastpage

3

Abstract

In this work, the oblique single grain boundary (oSGB) in 3D NAND unit cells is simulated with various temperatures to study threshold voltage (V_th) variation due to oSGB in 3D NAND unit cell of poly-Si channel. As the temperature increases, the overall V_th variations with oSGB decrease because of thermionic effect and more free carrier from generation effect. In addition, the difference of V_th variation become larger as the oSGB leans toward source or drain sides in poly-Si channel.

Keywords

NAND circuits; elemental semiconductors; flash memories; silicon; 3D NAND unit cells; Si; drain sides; flash memory; free carrier; generation effect; oSGB; oblique single grain boundary; polychannel; source sides; temperature dependence; thermionic effect; threshold voltage variations; Educational institutions; Electron devices; Electron traps; Grain boundaries; Temperature dependence; Three-dimensional displays; Threshold voltage; 3D NAND; Single grain boundary; poly-Silicon channel; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual

Print_ISBN

978-1-4799-4203-9

Type

conf

DOI

10.1109/NVMTS.2014.7060844

Filename

7060844