3-bit read scheme for single layer Ta2O5 ReRAM

Complementary switching mechanism allows for distinguishing between different physical orientations of the conductive filament. In addition to the multilevel capability of single layer Ta₂O₅ devices, 3-bit information can also be stored and read in a single device. In this report, we present a novel read scheme, allowing for distinguishing 8 different states only by using 4 different resistive states with the pulse measurements. Variability and cycle-to-cycle stability of the single layer Ta₂O₅ complementary switching are also discussed in details.