Title :
A fast dry etching of magnetic tunnel junction using a new plasma source
Author :
Whang, K.W. ; Cheong, H.W. ; Kim, J.W.
Author_Institution :
Dept. of Electr. & Inf. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
We have developed a new plasma reactor which can generate high density plasma at low neutral gas pressure. The ion current density in the new plasma reactor is more than ten times higher than that in the conventional inductively coupled plasma (ICP) reactor at neutral gas pressure lower than 1mTorr. It is remarkable that 25nm-thick magnetic tunnel junction (MTJ) stack can be etched and a 26nm-depth oxide recess can be formed within 40 seconds with the newly designed plasma reactor.
Keywords :
MRAM devices; sputter etching; fast dry etching; high density plasma; ion current density; low neutral gas pressure; magnetic tunnel junction; plasma reactor; plasma source; size 26 nm; Current density; Etching; Inductors; Iterative closest point algorithm; Magnetic tunneling; Plasmas; Substrates; Dry ethcing; Ion current density; Magnetic Tunnel Junction (MTJ); Magnetized Inductively Coupled Plasma (M-ICP); Plasma density;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Print_ISBN :
978-1-4799-4203-9
DOI :
10.1109/NVMTS.2014.7060848
