Title :
GGNMOS as ESD protection in different nanometer CMOS process
Author :
Weihuai Wang ; Shurong Dong ; Lei Zhong ; Jie Zeng ; Zhihui Yu ; Zhiwei Liu
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Grounded-gate NMOS (GGNMOS) plays a more important role in electrostatic discharge (ESD) protection because of its simple structure and low trigger voltage. Various GGNMOS based on 90nm, 65nm and 40nm CMOS process are compared to investigate its ESD characteristic changes with process advancing. Results show that the key parameters, including channel width and length, have great influence on its ESD metrics.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; CMOS; ESD; electrostatic discharge protection; grounded-gate NMOS; size 40 nm; size 65 nm; size 90 nm; Anodes; CMOS integrated circuits; CMOS process; Cathodes; Educational institutions; Electrostatic discharges; ESD metrics; GGNMOS; channel width;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061085
