Title :
Physical modeling of low temperature polycrystalline Si thin-film transistors
Author :
Mingxiang Wang ; Xiaoliang Zhou
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Abstract :
Modeling of low temperature polycrystalline (poly) Si thin film transistors (TFTs) in both the subthreshold and the on-state regions is presented. In the subthreshold region, effective channel mobility (μeff) model is based on the Meyer-Neldel rule with the physical origin of carrier thermionic emission activated by multi-phonon absorption process. In the on-state region, μeff model is based on grain boundary barrier controlled carrier thermionic emission and mobility degradation effect. A unified drain current model is derived by considering the inversion carrier density covering both subthreshold and on-state regions.
Keywords :
carrier density; elemental semiconductors; semiconductor device models; silicon; thermionic emission; thin film transistors; Meyer-Neldel rule; Si; TFT; carrier thermionic emission; channel mobility model; drain current model; grain boundary barrier; inversion carrier density; low temperature polycrystalline thin-film transistors; mobility degradation effect; multiphonon absorption process; Analytical models; Data models; Degradation; Fitting; Silicon; Thermionic emission; Thin film transistors; Modeling; drain current; effective channel mobility; polycrystalline Si; thin film transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061091
