Title :
Impact of high temperature reverse bias (HTRB) stress on the degradation of AlGaN/GaN HEMTs
Author :
Li RuGuan ; Wang YuanSheng ; Zeng Chang ; Liao XueYang ; Lai Ping ; Huang Yun
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., Minist. of Ind. & Inf. Technol., Guangzhou, China
Abstract :
High temperature reverse bias (HTRB) stress experiments were carried out on industrial GaN HEMTs. Several degradation characteristics of DC parameters such as drain current degradation, transconductance reduction, and threshold voltage shift were identified. It was interesting that the devices showed a considerable decrease in gate leakage current after HTRB stress. The results showed that conventional trapped-electron related mechanisms failed to explain current degradation in the devices, while the current degradation may be related to surface pitting.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; HEMT; drain current degradation; gate leakage current; high temperature reverse bias stress; threshold voltage shift; transconductance reduction; Gallium nitride; HEMTs; Logic gates; MODFETs; Performance evaluation; Reliability; Stress; AlGaN/GaN HEMT; HTRB stress; failure mechanisms; reliability;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061108
