• DocumentCode
    3578033
  • Title

    The Function of IR thermal imaging technology for device and circuit reliability research

  • Author

    Fang fang Song ; Xiaoqi He ; Yunfei En

  • Author_Institution
    Sch. of Mech. & Automotive Eng., South China Univ. of Technol., Guangzhou, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Along with the infrared technical rapid development, infrared radiation (IR) thermal imaging technology is widely applied in device and circuit reliability research. For device and circuit reliability study, IR thermal imaging technology is best for getting the peak temperature and temperature distribution. With the peak temperature and temperature distribution, the thermal information of the devices were evaluated and optimized to meet the design requirement. Secondly, IR thermal imaging technology is used to position hotspot for failures analysis, example for especially increases in elevated leakage currents. However, IR thermal imaging technology can provide evidence of excessive temperature rise due to power dissipation. It can identify root-cause of failures at temperatures below expectations.
  • Keywords
    circuit reliability; infrared imaging; IR thermal imaging; circuit reliability; device reliability; failures analysis; infrared radiation thermal imaging; leakage currents; power dissipation; temperature distribution; Electrical resistance measurement; Integrated circuit reliability; Position measurement; Semiconductor device measurement; Temperature; Temperature measurement; IR thermal imaging technology; hotspot; peak temperature; reliability research;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061109
  • Filename
    7061109