Title :
A 700 V low specific on-resistance self-isolated DB-nLDMOS
Author :
Kun Mao ; Ming Qiao ; Wentong Zhang ; Zhaoji Li ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A 700 V self-ISO (isolated) DB-nLDMOS (dual P-buried-layer nLDMOS) without epitaxy is proposed in this paper. By separately implanting deep junction NWELLs, drift region of low doping concentration in neck region is achieved. This alleviates the concentration of the electric field and avoids premature avalanche breakdown around the bird´s beak. Furthermore, introduction of triple RESURF (reduce surface field) technology and optimal device sizes benefit for ultra-low Ron,sp (specific on-resistance). Finally, this ISO DB-nLDMOS is experimentally integrated in a 700 V BCD process platform. Testing results show that proposed device achieves 780-V BVds, 10.4-Ω·mm2 Ron,sp and 20-V floating voltage of source electrode.
Keywords :
MOSFET; avalanche breakdown; electric fields; epitaxial growth; semiconductor device breakdown; semiconductor doping; BCD; NWELL; RESURF; avalanche breakdown; doping; dual P-buried-layer nLDMOS; electric field; epitaxy; reduce surface field technology; self-isolated DB-nLDMOS; specific on-resistance; voltage 20 V; voltage 700 V; voltage 780 V; Electrical resistance measurement; Lead; Resistance; Testing; 700 V; LDMOS; float; self-ISO;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061111
