Title :
Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment
Author :
Mu-Chun Wang ; Po-Kai Chen ; Win-Der Lee ; Yi-Hong Yu ; Shea-Jue Wang ; Fang Hsu ; Cheng, Osbert ; Huang, L.S.
Author_Institution :
Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan
Abstract :
Incorporating a high-k dielectric and metal gate engineering at deep-nano node process is a trend to promote the drive current of MOSFET devices. Nevertheless lots of challenges crowdedly reveal either process technologies or device model establishment. To reduce the gate leakage and enhance the device reliability, the nitridation process after high-k deposition will be utilized, but causing the difficulty in device model construction. One of the issues is Early effect which is not intersected at one point. The vertical field in gate node hugely contributes its influence in the entire electrical field in device operation.
Keywords :
MOSFET; high-k dielectric thin films; nitridation; semiconductor device reliability; Early effect; MOSFET devices; deep-nano node process; device model establishment; device reliability; drive current; gate leakage; high-k deposition; high-k dielectric; metal gate engineering; nitridation process; process technologies; size 28 nm; vertical field; Logic gates; MOSFET; MOSFET circuits; Market research; Reliability engineering; Substrates; DPN; Early voltage; PDA; high-k; metal gate;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061116
