• DocumentCode
    3578042
  • Title

    Development of low temperature amorphous tin-doped indium oxide thin-film transistors technology

  • Author

    Yang Liu ; Longyan Wang ; Shengdong Zhang

  • Author_Institution
    Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We successfully fabricated high performance amorphous tin-doped indium oxide (a-ITO) thin film transistors (TFTs) at low temperature (≤ 150 °C) for full-transparent, flexible and large area electronics applications. The fabricated a-ITO TFT has a typical threshold voltage (Vth) of about 0.12 V, an acceptable carrier mobility of 7.6 cm2/V·s, and a steep subthreshold swing of 174 mV/decade. The on/off current ratio is more than 1×107.
  • Keywords
    carrier mobility; indium compounds; thin film transistors; ITO; TFT; acceptable carrier mobility; electronics application; low temperature amorphous tin-doped indium oxide thin-film transistor; on-off current ratio; steep subthreshold swing; Annealing; Tin-doped Indium oxide TFT; amorphous; low temperature; post-annealing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061118
  • Filename
    7061118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578042