A new model of low-frequency noise in polycrystalline Silicon thin-film transistors

Author

Ming Wang ; Mingxiang Wang

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

An new model for the 1/f noise of polycrystalline Silicon thin-film transistors (poly-Si TFTs) is proposed. The model attributes the 1/f noise to carrier number fluctuation and grain boundary (GB) barrier fluctuation, which both caused by carrier trapping/detrapping between the channel inversion carriers and the intra-grain traps within the GB depletion region for poly-Si TFTs. The model fits the noise data very well in the low drain current region, clarifying the origin of 1/f noise in this region.

Keywords

1/f noise; electron traps; elemental semiconductors; hole traps; semiconductor device models; semiconductor device noise; silicon; thin film transistors; GB barrier fluctuation; GB depletion region; Si; carrier number fluctuation; carrier trapping-detrapping; channel inversion carrier; grain boundary barrier fluctuation; intragrain trap; l/f noise; low drain current region; low-frequency noise; poly-Si TFT; polycrystalline silicon thin-film transistor; Charge carrier processes; Noise; Noise measurement; Thin film transistors; 1/f noise; intra-grain traps; poly-Si TFTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061119

Filename

7061119