DocumentCode
3578100
Title
High PSRR low noise CMOS bandgap voltage reference
Author
Dongjun Wang ; Ping Luo ; Pengfei Liao
Author_Institution
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
A high PSRR with low temperature coefficient and low noise CMOS bandgap voltage reference fabricated in 0.13-μm CMOS technology is presented in this brief. In the design, the cascade current mirror is used in the circuit, the output of the OP is used as the bias of itself and drives the next stage, and PTAT temperature compensation is realized. The simulation results, which are obtained by Hspice tools, show that in the - 40~125°C temperature range, the circuit is working properly from 1.61V to 4V with 13.3ppm/ °C. The PSRR is more than 72.2dB and noise is 38.4nV @100k.
Keywords
CMOS integrated circuits; reference circuits; PTAT temperature compensation; high PSRR voltage reference; low noise CMOS bandgap voltage reference; size 0.13 nm; temperature -40 C to 125 C; voltage 1.61 V to 4 V; CMOS integrated circuits; CMOS technology; Electrodes; MOS devices; Noise; Presses; Bandgap reference; Cascade current mirror; PSRR; PTAT; Temperature compensate;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061176
Filename
7061176
Link To Document