Title :
AlGaN/GaN HEMTs on Si(100) substrate
Author :
Yan Zhao ; Cen Kong ; LiShu Wu ; Wei Cheng ; Tangsheng Chen
Author_Institution :
Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China
Abstract :
The Si (100) substrate of AlGaN/GaN HEMTs shows potential of the intimately heterogeneous integration of GaN and Si electronics. It offers new opportunities to increase the functionality and performance of GaN devices. In this paper, we describe our effort on demonstrating the heterogeneous integration of GaN transistor and Si substrate. AlGaN/GaN HEMTs have been fabricated on Si (100) substrate through epitaxial transfer process.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium compounds; high electron mobility transistors; semiconductor device manufacture; semiconductor device testing; silicon; substrates; wide band gap semiconductors; AlGaN-GaN; HEMT; Si; epitaxial transfer process; heterogeneous integration; high electron mobility transistors; Adhesives; Epitaxial growth; Gallium nitride; HEMTs; MODFETs; Performance evaluation; Silicon; AlGaN/GaN HEMT; Si(100); heterogeneous integration;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061182
