Influence of O2 on Al-Zn-Sn-O TFTs in the active layer deposition and annealing process

Author

Shuguang Zhang ; Letao Zhang ; Xiang Xiao ; Shengdong Zhang

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

In this article, bottom-gate amorphous Al-doped zinc tin oxide (AZTO) thin film transistors (TFTs) are fabricated. Typical transfer characteristics of the AZTO TFTs in different oxygen pressure were demonstrated and analyzed. Results illustrate that the performance of AZTO TFTs varies significantly with Ar/O₂ flow ratio. The mobility first increased and then decreased due to the continuous filling of oxygen vacancies with the increase of oxygen pressure. Oxygen introduced during the annealing process also changes the electrical features of the TFTs, for instance making the sub-threshold swing (SS) smaller and on current decline.

Keywords

aluminium compounds; amorphous magnetic materials; annealing; argon; oxygen; thin film transistors; tin compounds; zinc compounds; Al-Zn-Sn-O; Ar-O₂; active layer deposition; annealing process; bottom-gate amorphous AZTO thin film transistors; bottom-gate amorphous Al-doped zinc tin oxide TFT; electrical features; oxygen pressure; oxygen vacancies; sub-threshold swing; Amorphous magnetic materials; Annealing; Glass; Logic gates; Magnetic films; Magnetic resonance imaging; Thin film transistors; AZTO; Ar:O2 ratio; TFT; annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061191

Filename

7061191