Title :
Magnetic microscopy for 3D devices failure localization and analysis
Author :
Yuan Chen ; Na Lin
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., 5th Electron. Inst., Guangzhou, China
Abstract :
The magnetic microscopy was successfully applied to localize the failure site of the failed SDP memory sample before the decapsulation of the failed sample. The magnetic microscopy pointed the specific (X, Y, Z) coordinate of the failure site and the failure site was confirmed by optical microscopy and SEM analysis. The failure analysis case demonstrated in this article showed the effectiveness of the magnetic microscopy in the failure localization for 3D device.
Keywords :
failure analysis; integrated circuit packaging; integrated circuit reliability; optical microscopy; scanning electron microscopy; three-dimensional integrated circuits; 3D device failure analysis; 3D device failure localization; SDP memory sample; SEM analysis; failed sample decapsulation; failure analysis case; failure site localization; magnetic microscopy; optical microscopy; stacked die packaging memory; Magnetic analysis; Magnetic force microscopy; Magnetic resonance imaging; Microscopy; Optical imaging; Optical microscopy; Substrates;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061193
