Investigation of the influence of duty cycle on the vanadium oxide thin film thermistor deposited by pulsed dc reactvie magnetron sputtering

Author

Xiang Dong ; Zhiming Wu ; Xiangdong Xu ; Yu He ; Deen Gu ; Xiongbang Wei ; Tao Wang ; Yadong Jiang

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

Vanadium oxide (VOx) thin films were deposited using the pulsed dc reactive magnetron sputtering technique. The duty cycle of the pulsed power was found can be used to affect the reaction between the vanadium and oxygen and to tune the electrical properties of VOx. Depending on the influence of duty cycle on the composition, these VOx thin film thermistors showed room temperature resistivity in the range of 0.005 Ω-cm to 3.573 Ω-cm. The activation energy and thermistor constant are in the range of 0.016-0.188eV and 188-2182 K, respectively.

Keywords

sputter deposition; thermistors; thin film resistors; vanadium compounds; VO_x; duty cycle influence; electrical property; pulsed DC reactive magnetron sputtering deposition; temperature 293 K to 298 K; vanadium oxide thin film thermistor; Conductivity; Films; Sputtering; Temperature distribution; Temperature measurement; Thermistors; duty cycle; electrical property; thermistor; vanadium oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061194

Filename

7061194