• DocumentCode
    3578120
  • Title

    Fabrication of SiGe HBT integrated SOI CMOS

  • Author

    Jing Zhang ; Zhaohuan Tang

  • Author_Institution
    Nat. Lab. of Analog Integrated Circuits, Chongqing, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, an approach of developing the SOI CMOS vertical heterojunction bipolar transistor (HBT) is presented. With a novel all-depletion collector structure, the compatibility of HBT with MOS device in structure and process can be realized on a very thin SOI film, thus providing a new solution to producing high-performance integrated circuits.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; silicon-on-insulator; HBT; MOS device compatibility; SOI CMOS; SiGe; all-depletion collector structure; vertical heterojunction bipolar transistor; CMOS integrated circuits; CMOS technology; Heterojunction bipolar transistors; Performance evaluation; Silicon; CMOS; HBT; Integrate; SOI; SiGe;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061196
  • Filename
    7061196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578120