Title :
Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements
Author :
Ji Yang ; Jun Fu ; Yabin Sun ; Yudong Wang ; Wei Zhou ; Wei Zhang ; Jie Cui ; Gaoqing Li ; Zhihong Liu
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol. (TNList), Tsinghua Univ., Beijing, China
Abstract :
A simple dc method for determining the emitter series resistances of bipolar transistors from the measured forward-Gummel characteristics is proposed. The method is successfully applied to a set of SiGe HBTs with different sizes, which have been fabricated and measured over a large temperature range. As a result, the temperature scaling and geometric scaling characteristics of the extracted emitter series resistances are analyzed and discussed.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; HBT; SiGe; emitter series resistance extraction; forward-Gummel measurement; geometric scaling characteristics; heterojunction bipolar transistor; simple DC method; temperature scaling characteristics; Silicon germanium; Emitter resistance; Forward-Gummel measurements; Scalble model; SiGe HBT;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061199
