A physical model of ovonic threshold switching effect for phase change memory based on the trap-to-band transition mechanism

Author

Dongyun Shen ; Yiqun Wei ; Bin Deng ; Yuefeng Gong ; Yan Liu ; Xinnan Lin ; Xiaole Cui ; Zhitang Song

Author_Institution

Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

A new physical conductivity model of amorphous chalcogenide is proposed, based on carriers transport theory including hopping transport and trap-to-band transition. A numerical simulator based on this model is developed, and the simulation results agree well with the measurement. The ovonic switch voltage and current with different active area and temperature are studied based on the simulator, and the results show a good consistence with the measurement.

Keywords

chalcogenide glasses; hopping conduction; numerical analysis; phase change memories; semiconductor device models; active area; amorphous chalcogenide; carrier transport theory; hopping transport; numerical simulator; ovonic switch current; ovonic switch voltage; ovonic threshold switching effect; phase change memory; physical conductivity model; trap-to-band transition mechanism; Boundary conditions; Numerical models; ovonic threshold switch; phase-change memory; physical model;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061203

Filename

7061203