Title :
Total ionizing dose tests on ferroelectric random access memories
Author :
Ke Gu ; Ping Li ; Wei Li ; Xue Fan ; Yahong Zhai ; Bin Hu ; Yang Liu ; Zuxiong Li
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper presents the Cobalt-60 radiation test results of two different sizes of ferroelectric random access memories: 4Kb Ramtron FM25L04 and 16Kb Ramtron FM24CL16. The change of supply currents and the functional failures with respect to the total ionizing dose (TID) are obtained respectively to assess the radiation tolerance. The supply currents increased rapidly after 18 and 30 krad(Si) respectively for the FM25L04 and FM24CL16 devices. The FM25L04 devices had some read errors under 50 krad(Si), while the FM24CL16 devices withstood a TID up to 100 krad(Si) with no data corruption.
Keywords :
ferroelectric storage; ionisation; radiation hardening (electronics); random-access storage; Cobalt-60 radiation testing; Ramtron FM24CLI6 device; Ramtron FM25L04 device; TID; ferroelectric random access memory; radiation tolerance assessment; storage capacity 16 Kbit; storage capacity 4 Kbit; total ionizing dose testing; Ferroelectric films; Nonvolatile memory; Random access memory; ferroelectric random access memory; radiation effect; total ionizing dose;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061209
