DocumentCode
3578137
Title
Total dose dependence of hot carrier injection effect in the NMOS devices
Author
He Yujuan ; Zhang XiaoWen
Author_Institution
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
The total dose dependence of hot carrier injection (HCI) effect in the 0.35μm NMOS Devices was studied in this paper. It was indicated that the threshold voltage shift of NMOS devices with HCI test after 100krad (Si) total dose radiation was more than the devices without radiation. It was related to irradiation annealing effect and hot electrons being trapped by irradiation interface traps.
Keywords
MOSFET; annealing; hot carriers; radiation hardening (electronics); silicon; HCI effect; NMOS devices; Si; hot carrier injection effect; hot electrons; irradiation annealing effect; irradiation interface traps; radiation absorbed dose 100 krad; size 0.35 mum; threshold voltage shift; total dose dependence; total dose radiation; Annealing; Facsimile; MOS devices; MOSFET circuits; Silicon; HCI; Total dose; irradiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061213
Filename
7061213
Link To Document