Title :
Novel flexible FBAR on PET substrate
Author :
Hu, N.N. ; He, X.L. ; Bian, X.L. ; Chen, G.H. ; Dong, S.R. ; Luo, J.K.
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
A novel flexible Film Bulk Acoustic Wave Resonators (FBARs) based on ZnO/PET structure was fabricated without back-etch. The PET layer is applied as acoustic reflector and substrate of FBAR. It has 1.14GHz parallel resonant frequency, 1.229GHz series resonant frequency and about 150 Q factors. The FBARs acoustic impedance is improved by using harden metal Au instead of Al as the bottom electrodes. The ZnO/PET structure FBAR is also simulated by COSMOL to confirm its working mechanism.
Keywords :
II-VI semiconductors; acoustic impedance; acoustic resonators; bulk acoustic wave devices; electrodes; piezoelectric thin films; zinc compounds; PET substrate; ZnO; acoustic impedance; acoustic reflector; bottom electrodes; film bulk acoustic wave resonators; flexible FBAR; frequency 1.14 GHz; frequency 1.229 GHz; parallel resonant frequency; series resonant frequency; Artificial intelligence; Electrodes; Regulators; Resonant frequency; Silicon; Zinc oxide; FBAR; PET; flexible device; piezoelectric thin film;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061215
