Title :
Indium gallium zinc oxide - Carbon nanotube composite thin film transistor
Author :
Yucui Wu ; Min Zhang ; Xiang Xiao ; Shengdong Zhang
Author_Institution :
Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Abstract :
We fabricated indium gallium zinc oxide - carbon nanotube composite thin film transistors (IGZO - CNT TFTs) by a simple sputter method. The device performed comparable electrical properties with an on current of 95μA under the drain voltage of 20V. The on/off ratio reached 105. With the CNT embedded into IGZO, the threshold voltage has been improved to 3.4V from 10.8V of IGZO TFT fabricated under the similar condition.
Keywords :
carbon nanotubes; gallium compounds; indium compounds; semiconductor device manufacture; sputter deposition; thin film transistors; zinc compounds; IGZO - CNT TFT; InGaZnO; carbon nanotube; current 95 muA; sputter method; thin film transistor; voltage 10.8 V; voltage 20 V; voltage 3.4 V; Materials; carbon nanotube (CNT); indium gallium zinc oxide (IGZO); thin film transistor (TFT); threshold voltage control;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061216
