Title :
Negative differential resistance effect in ITO/TiO2/ITO based RRAM sandwich structures
Author :
Peijian Zhang ; Guangbing Chen ; Yong Liu ; Gangyi Hu ; Zhaohuan Tang ; Guohua Shui ; Wensuo Chen ; Yang Meng ; Xinyu Pan ; Hongwu Zhao
Author_Institution :
Nat. Lab. of Analog Integrated Circuits, Chongqing, China
Abstract :
ITO/TiO2/ITO based RRAM sandwich structures exhibited both large current-voltage hysteresis loop and voltage controlled negative differential resistance effects at room temperature. Resistance switching process was well interpreted and simulated using ion migration related filament model. We believed that the differential resistance effect originated from the combination results from the Joule heating and phase change or atomic rearrangement.
Keywords :
indium compounds; negative resistance; resistive RAM; tin compounds; titanium compounds; ITO-TiO2-ITO; Joule heating; RRAM sandwich structures; current-voltage hysteresis loop; ion migration; resistance switching process; voltage controlled negative differential resistance; Heating; Indium tin oxide; Metals; Switches; Voltage control; Joule heating; differential resistance; ion migration; resistance switching;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061219
