DocumentCode
3578162
Title
Double-gate tunneling FET with asymmetric gate structure and pocket source
Author
Dan Li ; Haijun Lou ; Xinnan Lin ; Lining Zhang ; Mansun Chan
Author_Institution
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
In this paper, asymmetric gate structure and pocket source are proposed into the double-gate tunneling FET (DG TFET). Steeper average subthreshold swing (SS) and larger on currents are observed in the proposed TFET as compared with conventional TFET. The improvements are attributed to a larger volume tunneling due to the enhanced body electric field. In addition, threshold voltage adjustment is achieved by adjusting the pocket source thickness, which indicates the potential for supply voltage scaling.
Keywords
field effect transistors; tunnelling; DG TFET; SS; asymmetric gate structure; double-gate tunneling field-effect transistor; enhanced body electric field; pocket source; steeper average subthreshold swing; supply voltage scaling; threshold voltage adjustment; volume tunneling; Electric potential; Field effect transistors; Logic gates; asymmetric structure; double-gate tunneling FET; volume tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061238
Filename
7061238
Link To Document