90-nm-gated AlGaN/GaN HEMT with fT&fmax of 132GHz&205GHz

Author

Gu Guodong ; Lv Yuanjie ; Dun Shaobo ; Tan Xin ; Song Xubo ; Yin Jiayun ; Feng Zhihong

Author_Institution

Nat. Key Lab. of Applic. Specific Integrated Circuit, Hebei Semicond. Res. Inst., Shijiazhuang, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with about 90 nm gate and 18nm-thick AlGaN barrier were fabricated on SiC substrate. The DC and RF characteristics were measured. The device has achieved a maximum drain current density of 1.2A/mm at a gate bias of +1.0V and a peak extrinsic transconductance of about 300mS/mm. The current-gain cutoff frequency (f_T) reached 132GHz, resulting in a f_T×L_g of 11.9GHz·um. The maximum oscillation frequency (f_max) reached 205GHz.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; wide band gap semiconductors; AlGaN-GaN; DC characteristics; HEMT; RF characteristics; frequency 132 GHz; frequency 205 GHz; high electron mobility transistor; maximum drain current density; size 18 nm; size 90 nm; voltage 1.0 V; Aluminum gallium nitride; Current measurement; Frequency measurement; Gallium nitride; HEMTs; Logic gates; Nitrogen; AlGaN/GaN HEMT fT× Lg;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061242

Filename

7061242