DocumentCode
3578177
Title
Mitigation of soft errors in resistive switching random-access-memories
Author
Jinshun Bi ; Zhengsheng Han
Author_Institution
Inst. of Microelectron., Beijing, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
The single-event-effect (SEE) response of 1T1R resistive switching random-access-memories (RRAMs) is examined. Two-photon-absorption laser experiments and simulation results indicate that soft errors can occur in RRAMs due to energetic particles striking the access transistor. Bit upset only occurs when the RRAM is in its high resistance state. An optimized 2T1R RRAM structure is proposed as an effective mitigation technique for soft errors. Advantages and disadvantages of the proposed method are estimated.
Keywords
radiation hardening (electronics); resistive RAM; 1T1R resistive switching random-access-memory; 2T1R RRAM structure; SEE response; single-event-effect response; soft error mitigation; two-photon-absorption laser experiment; Bismuth; Electrodes; Immune system; Microelectronics; Switches; Testing; Transistors; RRAM; resistive switching; single-event-effect; soft errors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061253
Filename
7061253
Link To Document