Title :
Design of a broadband variable-gain low noise amplifier
Author :
Yawen Wang ; Fengyi Huang ; Hao Li ; Youming Zhang
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
This paper presents the design of a broadband variable-gain low-noise amplifier (LNA) working in the RF band 6336-6864MHz.In this design, common gate amplifiers are used to get excellent input matching and linearity. To get lower noise figure (NF), the proposed LNA adopts Capacitive Cross-coupling (CCC) structure. Two PMOS transistors are introduced as positive feedback to optimize NF and bandwidth. Switches are added to achieve variable gain. The LNA is fabricated in TSMC 0.13-μm process. The post simulation results show the proposed LNA has a voltage gain of 21.3 dB to 22.8 dB in the frequency range from 6336 to 6864MHz. The LNA achieves NF less than 3dB at maximum gain mode. Return loss S11 of the LNA is better than -10.4dB and S22 is less than -14.7dB. The proposed wideband LNA consumes 7.8mA from a 1.2V supply.
Keywords :
MOSFET; circuit noise; low noise amplifiers; microwave amplifiers; microwave field effect transistors; switches; wideband amplifiers; CCS structure; NF; PMOS transistor; TSMC process; broadband variable-gain low noise amplifier; capacitive cross-coupling structure; common gate amplifier; current 7.8 mA; frequency 6336 MHz to 6864 MHz; gain 21.3 dB to 22.8 dB; input matching; noise figure; size 0.13 mum; switch; voltage 1.2 V; wideband LNA; Gain; Noise measurement; Reflection; Capacitive Cross-coupling; Low Noise Amplifier(LNA); TSMC 0.13-µm; positive feedback; variable gain;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061259
