• DocumentCode
    3578185
  • Title

    Ge channel MOSFETs directly on silicon

  • Author

    Che Wei Chen ; Cheng-Ting Chung ; Chao Hsin Chien

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <;10-7 A/cm2. Trigate PFET depicts a driving current of 22 μA/μm at VG = -2 V and a low OFF-current of 3 nA/μm at VG = 2 V. Junctionless trigate PFET shows ION/IOFF ratio of ~6×104 (ID), ~6×105 (IS), and the remarkably low off-current of 450 pA/μm at VD = -0.1 V. Strained trigate Ge NFET is demonstrated.
  • Keywords
    Ge-Si alloys; MOSFET; elemental semiconductors; germanium; Ge-Si; driving current; germanium channel MOSFET; high-performance germanium-silicon diode; junctionless trigate PFET; junctionless trigate germanium PFET; leakage current; low-OFF-current; silicon wafer; strained trigate germanium NFET; voltage 0.1 V; voltage 2 V; Artificial intelligence; Gallium arsenide; Lattices; Silicon; diode; germanium; junctionless; trigate;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061261
  • Filename
    7061261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578185