Title :
Stacked Ge2Sb2Te5/GeTe multi-level phase-change memory with asymmetric double-heater
Author :
Xiaocheng Hu ; Yiqun Wei ; Haijun Lou ; Xinnan Lin ; Xiaole Cui ; Zhitang Song
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
An symmetric double-heater structure is proposed into the traditional stacked layer phase-change memory (PCM) for the first time. It contains no barrier layer. The superior multi-level storage (MLS) is verified in this structure by numerical simulation. Temperature at the interface of two phase-change materials is greatly reduced by reasonably choosing the heater radius, which is beneficial for less atomic interdiffusion at the interface, thus more stable MLS. Device performance can be optimized through material thickness trade-off. Hence, this structure is a candidate utility for the future MLS device.
Keywords :
antimony compounds; chemical interdiffusion; germanium compounds; numerical analysis; phase change materials; phase change memories; Ge2Sb2Te5-GeTe; MLS; asymmetric double-heater; atomic interdiffusion; barrier layer; multilevel phase change memory; multilevel storage; phase change materials; stacked layer PCM; Heating; Instruction sets; Materials; Reliability; Resistance; Switches; Tin; MLS; asymmetric double-heater; interdiffusion; temperature distribution;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061265
